Electrical Transport and Photoelectric Properties of (As2Se3)1-x(CdSe)x (x=0.01, 0.03, 0.05) Glasses

dc.contributor.author	Ahmedova, C. A.
dc.date.accessioned	2024-12-30T10:20:06Z
dc.date.available	2024-12-30T10:20:06Z
dc.date.issued	2019
dc.identifier.issn	0020-1685
dc.identifier.uri	http://dspace.adiyaman.edu.tr:8080/xmlui/handle/20.500.12414/5661
dc.description.abstract	(As2Se3)(1 -x)(CdSe)(x) (x = 0.01, 0.03, 0.05) glass alloys have been prepared in the temperature range 500-700 degrees C using As2Se3 and CdSe as master alloys. The electrical transport and photoelectric properties of the alloys containing 1, 3, and 5 mol % CdSe have been studied. The temperature dependences of electrical conductivity for the glass alloys demonstrate that they are high-resistivity p-type semiconductors. The results on the photoelectric properties of the alloys indicate that the materials are photosensitive in the wavelength range 0.75-0.82 m and that their optical band gap varies from 1.51 to 1.65 eV.	tr
dc.language.iso	en	tr
dc.publisher	MAIK NAUKA/INTERPERIODICA/SPRINGER	tr
dc.subject	electrical conductivity	tr
dc.subject	photoconductivity	tr
dc.subject	glass alloys	tr
dc.title	Electrical Transport and Photoelectric Properties of (As2Se3)1-x(CdSe)x (x=0.01, 0.03, 0.05) Glasses	tr
dc.type	Article	tr
dc.contributor.department	Adiyaman Univ, Fac Arts & Sci,	tr
dc.identifier.endpage	508	tr
dc.identifier.issue	5	tr
dc.identifier.startpage	506	tr
dc.identifier.volume	55	tr
dc.source.title	INORGANIC MATERIALS	tr