Abstract:
(As2Se3)(1 -x)(CdSe)(x) (x = 0.01, 0.03, 0.05) glass alloys have been prepared in the temperature range 500-700 degrees C using As2Se3 and CdSe as master alloys. The electrical transport and photoelectric properties of the alloys containing 1, 3, and 5 mol % CdSe have been studied. The temperature dependences of electrical conductivity for the glass alloys demonstrate that they are high-resistivity p-type semiconductors. The results on the photoelectric properties of the alloys indicate that the materials are photosensitive in the wavelength range 0.75-0.82 m and that their optical band gap varies from 1.51 to 1.65 eV.
