Abstract:
Electrical characteristics of Co/n-Si Schottky barrier diodes are analysed by current-voltage (I - V) and capacitance-voltage (C - V) techniques at room temperature. The electronic parameters such as ideality factor, barrier height and average series resistance are determined. The barrier height 0.76 eV obtained from the C - V measurements is higher than that of the value 0.70 eV obtained from the I - V measurements. The series resistance R-S and the ideality factor n are determined from the d ln(I)/dV plot and are found to be 193.62 Omega and 1.34, respectively. The barrier height and the R-S value are calculated from the H(I) - I plot and are found to be 0.71 eV and 205.95 Omega. Furthermore, the energy distribution of the interface state density is determined from the forward bias I - V characteristics by taking into account the bias dependence of the effective barrier height. The interface state density N-ss ranges from 6.484 x 10(11) cm(-2) eV(-1) in (E-C - 0.446) eV to 2.801 x 10(10) cm(-2) eV(-1) in (E-C - 0.631) eV, of the Co/n-Si Schottky barrier diode. The results show the presence of a thin interfacial layer between the metal and the semiconductor.
