The analysis of lateral distribution of barrier height in identically prepared Co/n-Si Schottky diodes

Abstract

We have studied the experimental linear relationship between ideality factors and barrier heights (BHs) for Co/n-Si meta I-semiconductor (MS) structures with a doping density of about 10(15) cm(-3). The barrier heights for the Co/n-type Si metal-semiconductor structures from the current-voltage (I-V) characteristics varied from 0.64 to 0.70 eV, the ideality factor n varied from 1.18 to 1.26, and from reverse bias capacitance-voltage (C-2-V) characteristics the barrier height varied from 0.68 to 0.81 eV. The experimental barrier height distributions obtained from the I-V and C-2-V characteristics were fitted by a Gaussian distribution function, and their mean values were found to be 0.67 and 0.75 eV, respectively. Furthermore, the lateral homogeneous BH value of approximately 0.81 eV for Co/n-Si metal-semiconductor structures was obtained from the linear relationship between experimental effective BHs and ideality factors. (C) 2009 Elsevier B.V. All rights reserved.