Adıyaman Üniversitesi Kurumsal Arşivi

Determination of lateral barrier height of identically prepared Ni/n-type Si Schottky barrier diodes by electrodeposition

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dc.contributor.author Güler, Gülten
dc.contributor.author Güllü, Ömer
dc.contributor.author Bakkaloğlu, Ömer Faruk
dc.contributor.author Turut, Abdulmecit
dc.date.accessioned 2022-03-10T07:32:22Z
dc.date.available 2022-03-10T07:32:22Z
dc.date.issued 2008
dc.identifier.issn 0921-4526
dc.identifier.uri http://dspace.adiyaman.edu.tr:8080/xmlui/handle/20.500.12414/2462
dc.description.abstract Ni/n-Si/Au-Sb (21 dots) Schottky barrier diodes (SBDs) have been identically prepared by the electrodeposition method. The electrodeposition of Ni films on the n-type Si substrate has been carried out at a constant current density from an aqueous electrolyte of sulfate of Ni. The barrier height for the electrodeposited Ni/n-Si/ SBDs from the current-voltage (I-V) characteristics has varied from 0.58 to 0.70 eV, and ideality factor n from 1.10 to 1.66. We have determined a lateral homogeneous barrier height value of approximately 0.69 eV for the electrodeposited Ni/n-Si/SBDs from the experimental linear relationship between the barrier heights and ideality factors. The experimental Schottky barrier height (SBH) distribution obtained from the I-V characteristics has been fitted by a Gaussian function and a mean SBH value of 0.63 eV with a standard deviation of 30 meV has been obtained for the Ni/n-Si SBDs. (c) 2007 Elsevier B.V. All rights reserved. tr
dc.language.iso en tr
dc.publisher Elsevier tr
dc.subject Silicon tr
dc.subject Schottky barrier height tr
dc.subject Metal-semiconductor-metal contacts tr
dc.subject Barrier inhomogeneity tr
dc.title Determination of lateral barrier height of identically prepared Ni/n-type Si Schottky barrier diodes by electrodeposition tr
dc.type Article tr
dc.contributor.authorID 0000-0001-6807-5605 tr
dc.contributor.authorID 0000-0002-3785-6190 tr
dc.contributor.authorID 0000-0003-1622-3578 tr
dc.contributor.authorID 0000-0002-4664-4528 tr
dc.contributor.department Atatürk Üniversitesi/Fen Edebiyat Fakültesi/Fizik Bölümü. tr
dc.contributor.department Adıyaman Üniversitesi/Eğitim Fakültesi/Fizik Bölümü. tr
dc.contributor.department Gaziantep Üniversitesi/Mühendislik Fakültesi/Fizik Mühendisliği Bölümü. tr
dc.identifier.endpage 2214 tr
dc.identifier.issue 13-16 tr
dc.identifier.startpage 2211 tr
dc.identifier.volume 403 tr
dc.source.title Physica B-Condensed Matter tr


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